Superlattice to Nanoelectronics

Front Cover

Superlattice to Nanoelectronics

Copyright Page

Table of Contents

Preface

Introduction

Chapter 1 Superlattice

1.1 The Birth of the Man-Made Superlattice

1.2 A Model for the Creation of Man-Made Energy Bands

1.3 Transport Properties of a Superlattice

1.4 More Rigorous Derivation of the NDC

1.5 Response of a Time-Dependent Electric Field and Bloch Oscillation

1.6 NDC from the Hopping Model and Electric Field–Induced Localization

1.7 Experiments

1.8 Type-III Superlattice (Historically Type-II Superlattice)

1.9 Physical Realization and Characterization of a Superlattice

1.10 Summary

Chapter 2 Resonant Tunneling via Man-Made Quantum Well States

2.1 The Birth of Resonant Tunneling

2.2 Some Fundamentals

2.3 Conductance from the Tsu–Esaki Formula

2.4 Tunneling Time from the Time-Dependent Schrödinger Equation

2.5 Damping in Resonant Tunneling

2.6 Very Short l and w for an Amorphous QW

2.7 Self-Consistent Potential Correction of DBRT

2.8 Experimental Confirmation of Resonant Tunneling

2.9 Instability in RTD

2.10 Summary

Chapter 3 Optical Properties and Raman Scattering in Man-Made Quantum Systems

3.1 Optical Absorption in a Superlattice

3.2 Photoconductivity in a Superlattice

3.3 Raman Scattering in a Superlattice and QW

3.4 Summary

Chapter 4 Dielectric Function and Doping of a Superlattice

4.1 Dielectric Function of a Superlattice and a Quantum Well

4.2 Doping a Superlattice

4.3 Summary

Chapter 5 Quantum Step and Activation Energy

5.1 Optical Properties of Quantum Steps

5.2 Determination of Activation Energy in Quantum Wells

5.3 Summary

Chapter 6 Semiconductor Atomic Superlattice (SAS)

6.1 Silicon-Based Quantum Wells

6.2 Si-Interface Adsorbed Gas (IAG) Superlattice

6.3 Amorphous Silicon/Silicon Oxide Superlattice

6.4 Silicon–Oxygen (Si–O) Superlattice

6.5 Estimate of the Band-Edge Alignment Using Atomic States

6.6 Estimate of the Band-Edge Alignment with HOMO–LUMO

6.7 Estimation of Strain from a Ball-and-Stick Model

6.8 Electroluminescence and Photoluminescence

6.9 Transport through a Si–O Superlattice

6.10 A Si–O Superlattice and Other Si/Ge, Si/Co, Si/C Monolayer Superlattice

6.11 Summary

Chapter 7 Si Quantum Dots

7.1 Energy States of Silicon Quantum Dots

7.2 Resonant Tunneling in Silicon Quantum Dots

7.3 Slow Oscillations and Hysteresis

7.4 Avalanche Multiplication from Resonant Tunneling

7.5 Influence of Light and Repeatability under Multiple Scans

7.6 Many Body Effects in Coupled Quantum Dots

7.7 Summary

Chapter 8 Capacitance, Dielectric Constant, and Doping Quantum Dots

8.1 Capacitance of Silicon Quantum Dots

8.2 Dielectric Constant of a Silicon Quantum Dot

8.3 Doping a Silicon Quantum Dot

8.4 Capacitance: Spatial Symmetry of Discrete Charge Dielectric

8.5 Summary

Chapter 9 Porous Silicon

9.1 Porous Silicon: Light-Emitting Silicon

9.2 PSi: Other Applications

9.3 Summary

Chapter 10 Some Novel Devices

10.1 Field Emission with Quantum Well and Nanometer Thick Multilayer Structured Cathode

10.2 Saturation Intensity of PbS QDs

10.3 Multipole Electrode Heterojunction Hybrid Structures

10.4 Some Fundamental Issues: Mainly Difficulties

10.5 Comments on Quantum Computing

10.6 Recent Activities in Superlattice

10.7 Graphene Adventure

10.8 Summary

Chapter 11 Quantum Impedance of Electrons

11.1 Landauer Conductance Formula

11.2 Electron Quantum Waveguide

11.3 Wave Impedance of Electrons

11.4 Summary

Chapter 12 Why Super and Why Nano?

12.1 Finite Solid, Giant Molecule, and Composite

12.2 Generalization of Superlattices into Components

12.3 QDs as Individual Components

12.4 Size Requirements

12.5 Superlattice and the World of Nano

12.6 Some New Opportunities

12.7 A Word of Caution