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Radiation Effects in Silicon Carbide
A.A. Lebedev
Verlag Materials Research Forum LLC, 2017
ISBN 9781945291111 , 172 Seiten
Format PDF
Kopierschutz Wasserzeichen
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The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
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